The SiC789 and SiC789A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 6 mm x 6 mm MLP package, SiC789 and SiC789A enable voltage regulator designs to deliver up to 60 A continuous current per phase. The internal power MOSFETs utilize Vishay’s state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC789 and SiC789A incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and skip mode (SMOD#) to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V (SiC789A) / 5 V (SiC789) PWM logic.