GE thyristor:
The General Electric Company of the United States, or GE for short, was founded in 1892. It is the world's largest multinational company providing technology and services, headquartered in Boston, the United States.
GE thyristor is also known as silicon controlled rectifier (GE Thyristor SCR). In 1957, the American General Electric Company developed the world's first thyristor product and commercialized it in 1958.
The thyristor is a PNPN four-layer semiconductor structure, which has three poles: anode, cathode and gate. Its derivative devices include: fast thyristor, bidirectional thyristor, reverse conducting thyristor, light-controlled thyristor, etc.
It is a high-power switching semiconductor device, which is represented by the text symbols "V" and "VT" in the circuit (in the old standard, it is represented by the letters "SCR").
With the characteristics of silicon rectifier devices, thyristors can work under high voltage and high current conditions, and their working process can be controlled. They are widely used in the circuits of controllable rectification, AC voltage regulation, contactless electronic switches, inverters and frequency conversion electronics, etc.
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