The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction. Bi-directional blocking is facilitated by combining a 4-terminal symmetric p-channel MOSFET with a body bias selector circuita. Circuit operation automatically biases the p-channel body to the most positive source/drain potential thereby maintaining a reverse bias across the diode present between the source/drain terminals. Off-state device blocking characteristics are symmetric, facilitating bi-directional blocking for high-side battery switching in portable products. Gate drive is facilitated by negatively biasing the gate relative to the body potential. The off-state is achieved by biasing the gate to the most positive supply voltage or to the body potential. The Si3831DV is available in a 6-pin TSOP-6 package rated for the - 25 °C to 85 °C commercial temperature range.