The device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 250 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 19 ns, and the Rise Time is 19 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 606 mA, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 420 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 76 ns, and Typical Turn On Delay Time is 17 ns, and the Channel Mode is Enhancement. The Si1046R-T1-GE3 is MOSFET N-CH 20V 0.606A SC75-3 manufactured by VISHAY. The Si1046R-T1-GE3 is available in SC-75A Package, is part of the IC Chips, , and with support for MOSFET N-CH 20V 0.606A SC75-3, N-Channel 20V 250mW (Ta) Surface Mount SC-75A, Trans MOSFET N-CH 20V 0.606A 3-Pin SC-75 T/R. SI-1050G with circuit diagram manufactured by SANYO. The SI-1050G is available in MODULE Package, is part of the Module.